smd type ic smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SD2324 features low saturation voltage. contains a diode between colletor and emitter. contains a bias resistor between base and emitter. large current capacity. small-sized package facilitating the realization of high-density, small-sized hybrid ics. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage, with zener diode (113v) v cbo 20 v collector-emitter voltage, with zener diode (113v) v ceo 15 v emitter-base voltage v ebo 5v collector current i c 0.8 a collector current (pulse) i cp 2a collector dissipation p c 200 mw jumction temperature t j 150 storage temperature t stg -55 to +150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current ic bo v cb =15v,i e =0 1.0 a dc current gain h fe v ce =2v,i c =0.5a 70 gain bandwidth product f t v ce =2v,i c =0.5a 150 mhz output capacitance c ob v cb = 10v , f = 1mhz 15 pf collector-emitter saturation voltage v ce(sat) i c =500ma,i b = 10ma 0.16 0.3 v base-emitter saturation voltage v be(sat) i c =500ma,i b = 10ma 0.85 1.2 v collector-to-base breakdown voltage v (br)cbo i c =10a,i e =0 20 v i c =10a,r be = 20 v i c =10ma,r be = 15 diode forward voltage v f i f = 0.5a 1.5 v base-emitter resistance r be 1k collector-to-emitter breakdown voltage v (br)ceo marking marking bn sales@twtysemi.com 1of 1 http://www.twtysemi.com smd type transistors smd type smd type product specification 4008-318-123
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